FDS8880 mosfet equivalent, n-channel mosfet.
* rDS(on) = 10mΩ, VGS = 10V, ID = 11.6A
* rDS(on) = 12mΩ, VGS = 4.5V, ID = 10.7A
* High performance trench technology for extremely low
rDS(on)
* Low gate.
* DC/DC converters
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SO-8
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©2007 Semiconductor Components Industries,.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching s.
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